个人简介：
长期从事宽禁带半导体材料与器件的基础科学、工程技术和产业应用领域的创新探索研究，主要研究内容包括氮化镓和氧化镓等的外延生长与掺杂机制、芯片设计与模拟仿真、芯片制备与模块集成，研制一系列SBD/MOSFET/HEMT功率器件和SBD/MSM/PN/APD光电器件，包括: ①完成650V 氮化镓HEMT系列芯片，导通电阻规格为350mΩ/50mΩ/25mΩ/10mΩ等，其中10mΩ E-mode GaN HEMT芯片是全球同类规格的最低导通电阻；②首创的原子氮表面处理和CuCrO2异质结技术，完成650V/1200V/3000V系列氧化镓功率器件。受邀撰写碳化硅材料与器件英文专著章节，已在Nature Physics、Energy Storage Materials、Applied Physics Letters、IEEE EDL、IEEE TED等国际知名学术期刊和会议上发表论文100余篇，申请发明专利20余项，其中部分专利实现产业转化。
课题组主页：http://team.xmu.edu.cn/XMU_PSL/zh_CN/index.htm
学历和工作：
厦门大学 学士和博士
新加坡南洋理工大学 博士后
新加坡国立大学 博士后
新加坡科技研究局 科学家
研究方向：
宽禁带和超宽禁带半导体(氮化镓和氧化镓等)
主讲课程：
《微电子制造科学原理》、《宽禁带半导体材料与器件》、《第三代半导体先进工艺技术》
学术兼职：
Nature Electronics、Nature Communications、APL、IEEE EDL、IEEE TED、IEEE SJ等国际知名学术期刊评审专家
成果奖励：
福建省“*专百*计划”
福建省闽江学者奖励计划
厦门“双百计划”
课题项目：
深圳市基础研究专项，沟槽型氧化镓肖特基势垒二极管研究，2025.01-2027.12，主持
企业委托研发项目，面向新能源汽车用的氮化镓HEMT关键技术研究， 2024.05-2029.04，主持
厦门市双百计划创新项目，氧化镓功率器件研究， 2023.01-2025.12，主持
国家自然科学基金项目，常关型氧化镓异质结晶体管研究， 2022.01-2025.12，主持
企业委托研发项目，碳化硅功率器件与光伏逆变器研制， 2021.06-2024.05，主持
福建省高层次人才项目，宽禁带半导体材料与器件研究， 2021.01-2025.12，主持
福建省引才引智计划项目，宽禁带半导体功率器件研究， 2021.01-2022.06，主持
代表性论文：
[1]Shuaihang Xu et al., Weifeng Yang*. Phase transformation induced twin boundary in Ga2O3, submitted (2026).
[2]Xingkun Peng et al., Weifeng Yang*. Bias-Polarity-Reconfigurable Ga2O3/SnS2 Heterojunction for In-Sensor Lateral Inhibition and Optoelectronic Logic Computing, submitted (2026).
[3]Ying Li et al., Weifeng Yang*. 2.7-kV Ga2O3 heterojunction diode with stepped-mesa termination and on-state electrical stress reliability, submitted (2026).
[4]Mingtao Long et al., Weifeng Yang*. 3 kV-Class Vertical Ga2O3 Schottky Diodes with Dual-Dielectric Annular Trench Termination, submitted (2026).
[5]Zifan Hong et al., Weifeng Yang*. High-Performance Large-Area β-Ga2O3 MIS Trench Schottky with 60°-Tilted Fins and Al2O3/GaON Interfacial Insulators, submitted (2026).
[6]Kaiyue Li et al., Weifeng Yang*. 650-V Class E-mode p-GaN Gate HEMTs on 6-Inch Si with Ultralow 10 mΩ On-Resistance, submitted (2026).
[7]Shuaihang Xu et al., Weifeng Yang*. Bond-angle modulation in the nucleation layer overcomes the lattice-mismatch limits in Ga2O3 heteroepitaxy, Materials Futures 5, 035701 (2026).
[8]Ze Yang et al., Weifeng Yang*. Light-Induced Depletion-Region Modulation in a PtTe2/Ga2O3 Schottky Junction Field-Effect Transistor for Solar-Blind UV Detection, ACS Nano 20, 7877-7885 (2026).
[9]Ying Li et al., Weifeng Yang*. Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation, Journal of Alloys and Compounds 1057, 186858 (2026).
[10]Yifeng Wang et al., Weifeng Yang*. Normally-off β-AlGaO/Ga2O3 modulation-doped field-effect transistors with GaN P-N junction gate: proposal and investigation, Physica Scripta 101, 075916 (2026).
[11]Mingtao Long et al., Weifeng Yang*. Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping, Journal of Alloys and Compounds 1059, 187143 (2026).
[12]Xinwei Wang et al., Weifeng Yang*. Facilitating flat-band voltage shifts of 4H-SiC MOS capacitors by HfO2/SiO2 laminated stacks with multiple interfacial dipole layers, Journal of Alloys and Compounds 1062, 187557 (2026).
[13]Yutao Mo et al., Weifeng Yang*. Oxygen vacancy induced stability in Ga2O3-based resistive switching devices, Materials Science in Semiconductor Processing 205, 110376 (2026).
[14]Xinwei Wang et al., Weifeng Yang*. High-Speed and Responsivity 4H-SiC MISIM Ultraviolet Photodetector With SixN1-x Interlayer by Atomic Nitrogen Treatment, IEEE Sensors Journal 26, 1923-1930 (2025).
[15]Chengyi Tian et al., Weifeng Yang*. Performance and Stability Improvements in β-Ga2O3 MOSFET With Thin HfAlO Gate Dielectric by O2 Plasma Pretreatment, IEEE Transactions on Electron Devices 72, 6597-6604 (2025).
[16]Jialong Lin et al., Weifeng Yang*. Self-Powered Nano Pt/Amorphous Ga2O3/Crystalline CuCrO2 Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity, IEEE Electron Device Letters 46, 1966-1969 (2025).
[17]Ying Li et al., Weifeng Yang*. First Demonstration of CuCrO2/β-Ga2O3 p-n Heterojunction Diode with High Breakdown Voltage and Low Leakage Current, IEEE Transactions on Electron Devices 72, 4005-4010 (2025).
[18]Xingkun Peng et al., Weifeng Yang*. Modulating Oxygen Vacancies in β-Ga2O3 Microflake for High-responsivity Solar-blind Photodetectors, IEEE Sensors Journal 25, 24096-24105 (2025).
[19]Shubo Wei et al., Weifeng Yang*. Increase Fixed Charge at Al2O3/Ga2O3 Interface for High-performance Ga2O3 Trench Schottky Barrier Diodes by Atomic Nitrogen Treatment, Applied Physics Letters 126, 152108(2025).
[20]Zifan Hong et al., Weifeng Yang*. Low Turn-on Voltage and Reverse Leakage Current β-Ga2O3 MIS Schottky Barrier Diode with an AlN Interfacial Layer, IEEE Transactions on Electron Devices 71, 6934 - 6941 (2024).
[21]Jialong Lin et al., Weifeng Yang*. Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO2/β-Ga2O3 Heterojunction Photodetectors with Al Nanoparticles, IEEE Sensors Journal 24, 40717 – 40724 (2024).
[22]Xiaofeng Ye et al., Weifeng Yang*. Trench Beside Field Limiting Rings Terminal for Improved 4H-SiC Junction Barrier Schottky Diodes: Proposal and Investigation, Microelectronics Reliability 160, 115459 (2024).
[23]Huihuang Ke et al., Weifeng Yang*. High-performance 8×8 4H-SiC-Based MISIM Photodetector Arrays for UV Imaging, IEEE Photonics Technology Letters 36, 239-242 (2024).
[24]Jialong Lin et al., Weifeng Yang*. High Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron Sputtered CuCrO2/β-Ga2O3 p-n Heterojunction, IEEE Transactions on Electron Devices 71, 3045-3049(2024).
[25]Xinwei Wang et al., Weifeng Yang*. Simultaneous Electric Dipoles and Flat-band Voltage Modulation in 4H-SiC MOS Capacitors through HfO2/SiO2 Interface Engineering, Journal of Physics D: Applied Physics 57, 37LT01(1-5) (2024).
[26]Ze Yang et al., Weifeng Yang*. Lowering Schottky Barrier Height by Quasi-van Der Waals Contacts for High-performance P-type MoTe2 Field-Effect Transistors, ACS Applied Materials & Interfaces 16, 23752−23760 (2024).
[27]Chuanlun Zhang et al., Weifeng Yang*. High-Performance β-Ga2O3 MISIM Solar-Blind Photodetectors with An Interfacial AlN Layer, IEEE Photonics Technology Letters 36, 593-596 (2024).
[28]Chengyi Tian et al., Weifeng Yang*. Effect of Oxygen Precursors on Growth Mechanism in High-quality β-Ga2O3 Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-blind Photodetectors, IEEE Sensors Journal 24, 14109-14117 (2024).
[29]Jinyong Wang et al., Weifeng Yang*. Synergistically Modulating Conductive Filaments in Ion-Based Memristors for Enhanced Analog In-Memory Computing, Advanced Science 11, 2309538 (2024).
[30]Jie Zhang et al., Weifeng Yang*. Self-aligned ionic doping of TiO2 thin film transistors for enhanced current drivability via post-fabrication superacid treatment, ACS Applied Materials & Interfaces 16, 51010−51019 (2024).
[31] Science China Materials 65, 741-747 (2022).
[32] Energy Storage Materials 23, 1-7 (2019).
[33] Nano Energy 56, 269-276 (2019).
[34] Journal of Materials Chemistry A 7, 13339-13346 (2019).
[35] Nature Physics 15, 347-351 (2019).
[36] ACS Nano 12, 2506−2513 (2018).
[37] Nano Energy 49, 588-595 (2018).
[38] Nanoscale 10, 22927-22936 (2018).
[39] Nanoscale 10, 20113-20119 (2018).
[40] Applied Physics Letters 112, 171604 (2018).
[41] Advanced Materials 27, 6208–6212 (2015).
[42] Applied Physics Letters 102, 111901 (2013).
[43] Applied Physics Letters 98, 121903 (2011).
[44] IEEE Electron Device Letters 32, 530 (2011).
[45] IEEE Electron Device Letters 31, 588 (2010).
[46] Applied Physics Letters 97, 061911 (2010).
[47] Applied Physics Letters 97, 061104 (2010).
[48] Applied Physics Letters 92, 251102 (2008).
[49] Applied Physics Letters 97, 081107 (2010).
[50] Applied Physics Letters 96, 031902 (2010).
代表性专利
[1] 杨伟锋，帅浩 张明昆 | 一种常关型氧化镓基MIS-HFET器件 中国专利号：ZL 202110493226.X
[2] 杨伟锋，帅浩 | 一种具有盖帽层的常开型氧化镓基HFET器件及其制备方法 | 中国专利号：ZL 202110493226.X
[3] 杨伟锋，帅浩，张保平 | 一种氧化镓基MIS-HEMT器件及其制备方法 | 中国专利号：ZL 202111021113.6
[4] 杨伟锋，林嘉隆等 |一种高响应度自供电日盲光电探测器及其制备方法 | 主要发明者：中国专利号：202410021349.7
[5] 杨伟锋，翁宏锦等 |一种SiC MOSFET串扰抑制驱动电路 | 中国专利号：CN202410487045.X
[6] 杨伟锋，陈祖岗，翁宏锦，石紫亮 | 一种基于自适应模糊控制的光伏逆变器 | 中国专利号：202310563515.1
[7] 杨伟锋，王鑫炜，冶晓峰，龙明涛 | 一种含稀土栅介质层的超结SiC MOSFET及其制造方法 | 中国专利号：ZL 202310089969.X
[8] 杨伟锋，冶晓峰，王懿锋，王鑫炜 | 一种用于SiC功率器件的复合终端结构及其制造方法 | 中国专利号：202211743085.3
[9] 杨伟锋，冶晓峰，王懿锋，王鑫炜 | 一种用于SiC功率器件的阶梯状复合终端结构及其制造方法 | 中国专利号：202211743100.4
[10] 杨伟锋，王鑫炜，冶晓峰，龙明涛 | 一种含稀土栅介质层的平面型SiC MOSFET及其制造方法 | 中国专利号：ZL 202310089961.3
[11] 王懿锋，杨伟锋 | 一种 PN 结栅氧化镓基 MODFET 器件及其制备方法 | 中国专利号：202411346806.6
[12] 杨伟锋，孙游成，翁宏锦，石紫亮 | 单相两级光伏并网逆变器遮光条件下功率点跟踪系统 | 中国专利号：202410826390.1
[13] 杨伟锋，翁宏锦，陈祖岗，袁嘉利，孙游成，石紫亮 | 一种SiC MOSFET串扰抑制驱动电路 | 中国专利号：202410487045.X
[14] 陈祖岗，翁宏锦，袁嘉利，孙游成，石紫亮，杨伟锋 | 一种基于卡尔曼滤波器的光伏逆变器及其并网控制方法 | 中国专利号：202410431511.2
[15] 袁嘉利，陈祖岗，孙游成，翁宏锦，石紫亮，杨伟锋 | 一种改进型扰动观察法的最大功率点追踪算法 | 中国专利号：202410063064.X
[16] 杨伟锋，袁嘉利，孙游成，石紫亮 | 一种基于模糊PID控制的碳化硅光伏逆变器散热方法 | 中国专利号：202311416595.4
[17] 杨伟锋，洪梓凡，彭行坤，张捷 | 一种具有AlN势垒层的氧化镓肖特基二极管及制备方法 | 中国专利号：202311264299.7
[18] 杨伟锋，田成义，张传伦，张捷 | 采用MBE刻蚀后外延的常关型氧化镓基器件及制备方法 | 中国专利号：202310862139.6
[19] 詹鸿儒，周斯加，杨伟锋 | 一种p型栅结构常关型GaN HEMT器件及制备方法 | 中国专利号：202411915530.9
[20] 李成超，周斯加，杨伟锋 | 一种增强型GaN HEMT器件及其制备方法 | 中国专利号：202510103718.1
